Study on Photo-Sensitive Low Dielectric Materials Passivation on Back-Channel-Etched Amorphous Silicon Thin Film Transistors

• Main Authors: Cheng-Yi Chiang, 江政禕
• Other Authors: Feng-Sheng Yeh
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/49808319007394472571

碩士 === 國立清華大學 === 電子工程研究所 === 94 === Abstract In this thesis, we investigated the application of photo-sensitive low dielectric passivation materials for thin-film-transistor (TFT) technology. photo-sensitive low dielectric passivation materials has the properties of the high transmittance (>90% at 300~800 nm), low photo leakage current and good planarization for TFT passivation layer. In addition, it can effectively increase the aperture ratio of display matrix and reduce resistance-capacitance delay (RC delay). More importantly, the photosensitivity of material property makes to simplify process and reduce fabrication steps. Therefore, the application of the photo-sensitive low dielectric passivation materials on TFT device has become one of the most important issue for flat panel display. In this study we have investigated two of the promising candidates of photo-sensitive low dielectric passivation materials for TFT array technology application. In TFT process, the effects of passivation layers on device electrical characteristics are the most important issue. In this study, the effects of two kinds photo-sensitive low dielectric passivation materials and conventional silicon nitride passivation layer on device electrical characteristics are discussed. In conclusion, we have found that the leakage of devices with photo-sensitive low dielectric passivation is little changed by illumination. Otherwise, device performance exhibits also well in reliability. This indicates that photo-sensitive low dielectric passivation materials are the most possible candidate to replace the conventional SiNx passivation layer on TFT device in the future.