Study on P3HT FET and active matrix circuit

• Main Authors: Chin-Jung Jiang, 江致榮
• Other Authors: Sheng-Fu Horng
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/49830524507630797119

碩士 === 國立清華大學 === 電子工程研究所 === 94 === Integrating polymer light-emitting diodes (LED) and polymer field-effect transistors (FET) on one substrate to fabricate 2T1C active-matrix array circuit by solution process can reduce the cost substantially. The polymer devices can be fabricated on various substrates, such as flexible substrate. Additionally, organic LEDs are regarded as the potential technology in display with advantages of high brightness, high contrast, and low operating voltage. We use P3HT as semiconductor, use SiO2 as insulator, and successfully fabricate FET with mobility of 10-2 (cm2/V-s) and on/off ratio of 104 on glass substrate. To increase reliability of P3HT FET, we use chromium as gate material. To lower leakage current, we design new mask. We also use different coating methods and O2 plasma treatment to enhance mobility. Eventually, we applied P3HT FETs to 1T1C active-matrix circuit and obtained successful operation of charging and discharge in this 1T1C circuit at 10Hz, 100Hz, 500Hz, and 1KHz. The fastest rise time is 0.3 (ms).