| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 94 === Abstract
In order to understand the central nervous system more, researchers must rely on some kinds of special recording instrument to record the neural signal we want. Recently, most of neural recording probes are fabricated by using thin-film and integrated circuit(IC) technology. Because of the maturity of IC technology, the performance of neural recording probe is more reliable and accurate. But they almost must use the special process to support and that means the higher production cost. In this article, we design a novel die-level fabrication of neural recording probes to improve drawbacks of the past probes.
In this project, we present the design and characterization of a CMOS micromachined neural recording probe. The fabrication uses a standard TSMC 0.35-mm 2P4M CMOS process followed by post-CMOS micromachined steps performed at the die level. We can do the extracellular recording through our CMOS-MEMS neural recording probe and measure the electrical signal like the action potential. Therefore, the key feature of our approach is the post-CMOS process of the die level to fabricate the microstructure of neural probe and integrate the sensing circuit with microprobes.
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