The study of nanoimprint lithography with the novel UV-based mould

• Main Authors: Chen-Liang Liao, 廖振良
• Other Authors: Fon-Shan Huang
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/38183694510677551365

碩士 === 國立清華大學 === 電子工程研究所 === 94 === As progress of IC fabrication technology, the device size was scaling down gradually. According to the prediction of ITRS (International Technology Roadmap For Semiconductors Conference) of 2005, 1/2 Pitch of the component has reached 57nm in 2008, and will reach 40nm in 2011. UV-curable nanoimprint lithography technology has simple process, low cost, and high throughput and has potential in IC process. It is able to fabricate nano-scale structure using UV-mould by E-beam lithography. The imprinting resist composed of photo-sensitive polymer, is effected by 300~400nm UV to achieve the low temperature process. First at all, we used low dose e-beam combined with novel heat cycle in order to get smooth surface morphology, high transmittance and high hardness HSQ film. SEM, AFM, UV spectrophotoscopy and nanoindenter were used to examine the HSQ film. The novel heat cycle included softbake and hardbake at step-like temperature controlled with various time interval. Secondly, in order to cost down, we fabricated HSQ/ITO/Glass mould to substitute for quartz, and using e-beam lithography with low dose (360mC/cm2) to define patterns. HSQ films developed by different TMAH concentration (5~25%) with etch time (3~20s) and post-expose bake temperature (160~2000C). UV-mould with various width/space=1：2、1：3、1：10 for line width 135nm、75nm、80nm were fabricated, respectively. For UV-curable nanoimprint, we coated release layer (F13-TCS) on HSQ mould. Then, we succeed to transfer HSQ patterns on PR (PAK-01-200) at room temperature with low pressure (5~15psi). The SEM was then taken to observe the transferred patterns. In this thesis, we successfully fabricate al low cost and low e-beam dose HSQ/ITO/Glass mould. For line width 75nm with width/space ratio 1:3, line width 135nm width/space ratio 1:2 and line width 80nm with width/space ratio 1:10 moulds, we also succeeded to transfer the above line patterns on to photo resistance PAK for future IC lithography feasibility study.