The Fabrication and Electrical Properties of Metal(Al)/Ferroelectric(Pb(Zr0.6Ti0.4)O3)/Insulator(HfO2 and ZrO2)/Silicon (p-type) MFIS Capacitors and Field Effect Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 94 === Ferroelectric field effect transistors with a metal-ferroelectric- insulator-silicon (MFIS) structure have emerged as promising nonvolatile memory devices. In this work, metal (Al)/ferroelectric (PZT)/insulator/Si MFIS capacitors and field effect transistors us...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18166988081744379325 |