Extracting the Effective Channel Length and Series Resistance of 65nm pMOSFET

• Main Authors: Yenyu Chen, 陳彥妤
• Other Authors: Jeng Gong
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/90127905584725285521

碩士 === 國立清華大學 === 電子工程研究所 === 94 === A new, more accurate and more reasonable method of　determining the MOSFETs effective channel length and source-drain　series resistance is presented in this thesis. This method improves　shit-and-ratio method and develops a more accurate calculation　system. Comparing the extracted values from the Suciu-Johnston　method, De La Moneda method, shift-and-ratio method, gate leakage method, and our new method, we prove that our method is the most accurate and reasonable one. Besides, we use this newly developed method to observe the co-implant source/drain effect in a 65nm pMOSFET.