High-quality thin single-crystalline Sc2O3 films grown on Si(111)
碩士 === 國立清華大學 === 材料科學工程學系 === 94 === Sc2O3 films had been found to be epitaxially grown on Si (111) substrate with different thickness. With electron beam evaporated from a high-purity Sc2O3 source in UHV (a molecular beam epitaxy (MBE) approach), we got good crystallinity Sc2O3 film on silicon sub...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28146793937263837249 |