Preparation of BiFeO3 thin films by chemical solution deposition method

• Main Authors: Chin-Feng Chung, 鐘金峰
• Other Authors: Jenn-Ming Wu
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/22730685479615472139

碩士 === 國立清華大學 === 材料科學工程學系 === 94 === The BiFeO3 (BFO) thin films have been recognized as the potential dielectric materials of DRAM. Unfortunately, the leakage current is too large for apply. There are three works in my researches, the first of this work added the Mn content to the multi-doped BiFeO3 to form three kinds of compositions with different Mn ratios of 0, 2%, 5%, and 10%. The purpose of this work is to reduce the leakage current of BFO thin films with high permittivity by spin coating. The research of Mn-added multi-doped BiFeO3 thin films was focused on the XRD structure analysis, microstructure, and dielectric and electric properties and magnetic properties. The Mn-added multi-doped were prepared for studying the effect of annealing temperature on dielectric properties and resistivity. Second, I doped high value ions Nb to reduce the leakage current of BFO films on Pt substrate, realized difference of different ions doped in BFO films. Finally I change different substrates to improve BFO properties Using LaNiO3 substrate to help BFO transform perovskite phase and lower crystalline temperature.