Characterization of NiSi2 nano dot for memory device
碩士 === 國立中山大學 === 物理學系研究所 === 94 === In order to obtain memory devices with a lower operating voltages、better endurance and retention ,we use nano-dot to replace floating-gate and narrow the thickness of tunnel-oxide to modify the nonvolatile memory device we are now using. These allow the nonvolati...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15220969270094822350 |