Characterization of NiSi2 nano dot for memory device

• Main Authors: Siang-yue Liang, 梁翔越
• Other Authors: Ikai Lo
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/15220969270094822350

碩士 === 國立中山大學 === 物理學系研究所 === 94 === In order to obtain memory devices with a lower operating voltages、better endurance and retention ,we use nano-dot to replace floating-gate and narrow the thickness of tunnel-oxide to modify the nonvolatile memory device we are now using. These allow the nonvolatile memory device produced in higher density、operated in lower voltage and program in faster speed. In this study, we have fabricated a nano-dot memory device with NiSi2 .The temperature-dependent leakage current has been measured with the voltage bias swept from -5V to 5V on the outer gate electrode as temperature from 1.2K to 300K.The results from the V-I curve show that the sample with tunnel-oxide layer of 2nm HfO2/1nm SiO2 have a larger leakage current during 50K to 60K when temperature measured from 30K to 100K. And the leakage current is larger in 80K than in 100K to 120K when the tunnel-oxide layer is of 3nm SiO2 . Therefore we have discovered the unique phenomena of leakage current in the temperature from 1.2K to 300K.