Process and analysis of nano wire in InGaAs/AlInAs by focused ion beam
碩士 === 國立中山大學 === 物理學系研究所 === 94 === On InGaAs/AlInAs heterostructures we made nanowires which were made by focus ion beam (FIB) and the width of nanowires making by FIB were 40nm、70nm、100nm and 200nm respectively. we studied electronic characterization of nanowires using Shubnikov-de Haas(SdH).In o...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10061351061484358976 |