Investigation of PAMBE Grown InN on Different Buffer Layers

• Main Authors: Zhi-Wei Jiang, 江志偉
• Other Authors: Li-Wei Tu
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/35494840549013498579

碩士 === 國立中山大學 === 物理學系研究所 === 94 === In this thesis, we study high quality InN films grown on sapphire (0001) by plasma-assisted molecular beam epitaxy (PAMBE). We used double layers methods to reduce lattice mismatch successfully. In this experiment, we have two series of samples, about series of A use low temperature GaN (LT-GaN) as the buffer layer as compared with series of B use high temperature AlN (HT-AlN) as the buffer layer. By in situ reflection high-energy electron diffraction (RHEED), we got film’s surface situation. Surface morphology of the samples was observed by atomic force microscope (AFM). By high resolution X-ray diffraction (HR-XRD) methods was analyzed quality and composition of InN films. Van der Pauw method (Hall) was used to determine carrier concentration and mobility. The optical properties of InN films under different growth conditions were investigated by photoluminescence (PL). By changing growth temperature of these samples, we found the series of A having some fine characters as the InN(0002) rocking curve was 343 arcsec and InN(10-12) rocking curve was nearly 1000 arcsec. The mobility and carrier density of these samples were approximately 1000 cm2/Vs and 3 x 1018 cm-3 by Van der Pauw method.