| Summary: | 碩士 === 國立中山大學 === 光電工程研究所 === 94 === The thesis focuses on the study of asymmetric multiple quantum wells (AMQWs). There are two main sources of the samples. One is from our laboratory. We used molecular-beam epitaxy to grow the InGaAs/InGaAlAs AMQWs of different well widths and different position arrangement of well width. And we also designed the AMQWs with p-type modulation doping at the different barrier region. The other is from Land Mark Optoelectronics Corporation. They used Metalorganic Chemical Vapor Deposition (MOCVD) to grow the InGaAsP AMQWs of different well widths and different position arrangement of well width.
There are five experiments in my thesis. First of all, we use electroluminescence (EL) measurement to discuss the EL spectra of the samples. The EL spectra can show the shape, intensity and full width half maximum. Second, we use the photoreflectance (PR) measurement, which uses laser beam to modulate the dielectric constant of samples, to discuss the transition energies by using simulation and curve fitting. And we got build-in electric field from FKO data and simulation. In the last three experiments, we analyzed photocurrent spectra, photoluminescence spectra and electro-absorption spectra individually and then compared the three to all experiments in the thesis.
In these experiments, we discovered that the sample C092 exhibits a broad and flat EL spectrum and 2500Å covering from 1.38~1.63μm. Besides, we also found that the emission of wells is dominated by the arrangement of quantum wells. Moreover, the arrangement of quantum wells is relative to material. Therefore, even if we use the same way of arrangement, the different materials will lead to different results.
Finally, we expect that we can use our AMQWs samples to produce broadly tunable laser and broad-band semiconductor optical amplifier (SOA) in the future.
|
|---|
