| Summary: | 碩士 === 國立中山大學 === 光電工程研究所 === 94 === Photo luminescence of C545T and NPB on porous Si was studied. The porous Si structures were obtained by anodic dissolution of p-type Si in a concentrated HF solution. Pore diameter of 100Å and pore layer of a thickness around 0.5μm were formed by varying the electrolytic condition, including HF concentration, anodiztation time, electrolytic current and voltage. The photo luminescence of C545T and NPB were investigated by depositing them onto the porous Si substrate using spin coating, dipping with ultrasonic agitation and thermal evaporation techniques. The photo luminescence of C545T and NPB were found to peak around 580nm and 440nm for samples prepared by spin coating. However, for NPB samples deposited by dipping with ultrasonic agitation and thermal evaporation, additional photo luminescence peak at 430nm were observed. SEM photos analysis confirm that the organic materials can diffuse into the Si pores by ultrasonic agitation and deposition in vacuum.
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