Analyses of the Multi-Gate MOSFET Characteristics

• Main Authors: Tze-Neng Lin, 林子能
• Other Authors: Meng-Hsueh Chiang
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/90242376064945391214

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 94 === In this thesis, we discuss the characteristics of the nanoscale multi-gate MOSFET. In chapter 1, we include our research motive and thesis institutional framework. In chapter 2, we analyse of the intrinsic electric potential in multi-gate device, and we use Poisson’s Equation to analyse 2-D potential distributions and simulation. In chapter 3, we examine the drain-induced barrier lowering (DIBL) and subthreshold characteristics of the multi-gate devices in three different aspect ratios of 1:1, 1:4, and 4:1 via a numerical device simulator. In addition, we have done relevant simulations and discussion to the Corner Effect. Rounder Corner structures were designed to reduce the corner effect. In chapter 4, we summarize the conclusions of the thesis, and the suggested future work is proposed.