Annealing influences on phosphorous ion implanted vicinal Si(111) studied by Reflective Second Harmonic Generation
碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 94 === Second harmonic generation (SHG) is used to study the annealing effect on the low-energy implanted vicinal Si(111). The phenomena of the impurity diffusion would be observed through the anisotropic contribution of C3V symmetry in the SHG rotational anisotropy...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39838780842106554860 |