Effect of a tensile-strained InGaP electron stopper layer for 1.3-μm InGaAsP/InP strained multiple quantum well lasers
碩士 === 國立彰化師範大學 === 光電科技研究所 === 94 === In this thesis, the effect of the different position of a tensile-strained InGaP electron stopper layer (ESL) on 1.3-μm InGaAsP/InP compressive-strained multiple-quantum-well (MQW) ridge waveguide laser diodes (LDs) was investigated. InGaAsP/InP material is the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65695049651071740267 |