The study of microwave activation on hydrogen ions implanted with silicon
碩士 === 國立中央大學 === 機械工程研究所 === 94 === The development in Silicon-on-Insulator(SOI)materials and dissimilar materials layer transfer process have led the thin film semiconductor technology into a new era. Smart-cut process is a layer transfer process which combines three main steps: ion implantation,...
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ndltd-TW-094NCU054891192015-10-13T16:31:37Z http://ndltd.ncl.edu.tw/handle/02366057553934510527 The study of microwave activation on hydrogen ions implanted with silicon 微波活化對被植入於矽中之氫離子之研究 Yu-Kai Hsu 徐育愷 碩士 國立中央大學 機械工程研究所 94 The development in Silicon-on-Insulator(SOI)materials and dissimilar materials layer transfer process have led the thin film semiconductor technology into a new era. Smart-cut process is a layer transfer process which combines three main steps: ion implantation, wafer bonding, and layer splitting. However, it still has some drawbacks such as high thermal stress, high energy consumption and low production efficiency, resulting from the thermal treatment. Therefore it is highly expected that an emerging source of energy, the microwave energy, will replace the traditional annealing process and thus solve those problems. The purpose of this paper is to study the priming excitation effect that microwave activation effect has on the hydrogen ions which were implanted into the silicon wafer. In the experiment, various silicon wafers implanted with different dosage of hydrogen ions were irradiated by microwave at different length of time and microwave power, with a view to examining the relationship between each other. The results indicated that, irradiating at 5W microwave power for 60 seconds, blisters will occur on the surface of the wafers which were implanted with 4×1016ion/㎝2 of hydrogen ions. This showed that the microwave can indeed excite hydrogen ions. On the other hand, the wafers implanted with 5×1015ion/㎝2 of ions had no reactions even when irradiated at higher microwave power. It showed that the implanted hydrogen ions have to reach a critical dosage so as to form blisters under the microwave irradiation. In addition, the higher microwave power and the longer irradiation time, the more hydrogen ions can be excited and gain the energy to form gas molecule. Finally the hydrogen ions aggregated and caused the bubbles to burst or the thin film to ablate. Tien-Hsi Lee 李天錫 2006 學位論文 ; thesis 60 zh-TW |
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碩士 === 國立中央大學 === 機械工程研究所 === 94 === The development in Silicon-on-Insulator(SOI)materials and dissimilar materials layer transfer process have led the thin film semiconductor technology into a new era. Smart-cut process is a layer transfer process which combines three main steps: ion implantation, wafer bonding, and layer splitting. However, it still has some drawbacks such as high thermal stress, high energy consumption and low production efficiency, resulting from the thermal treatment. Therefore it is highly expected that an emerging source of energy, the microwave energy, will replace the traditional annealing process and thus solve those problems.
The purpose of this paper is to study the priming excitation effect that microwave activation effect has on the hydrogen ions which were implanted into the silicon wafer. In the experiment, various silicon wafers implanted with different dosage of hydrogen ions were irradiated by microwave at different length of time and microwave power, with a view to examining the relationship between each other. The results indicated that, irradiating at 5W microwave power for 60 seconds, blisters will occur on the surface of the wafers which were implanted with 4×1016ion/㎝2 of hydrogen ions. This showed that the microwave can indeed excite hydrogen ions. On the other hand, the wafers implanted with 5×1015ion/㎝2 of ions had no reactions even when irradiated at higher microwave power. It showed that the implanted hydrogen ions have to reach a critical dosage so as to form blisters under the microwave irradiation. In addition, the higher microwave power and the longer irradiation time, the more hydrogen ions can be excited and gain the energy to form gas molecule. Finally the hydrogen ions aggregated and caused the bubbles to burst or the thin film to ablate.
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Tien-Hsi Lee |
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Tien-Hsi Lee Yu-Kai Hsu 徐育愷 |
author |
Yu-Kai Hsu 徐育愷 |
spellingShingle |
Yu-Kai Hsu 徐育愷 The study of microwave activation on hydrogen ions implanted with silicon |
author_sort |
Yu-Kai Hsu |
title |
The study of microwave activation on hydrogen ions implanted with silicon |
title_short |
The study of microwave activation on hydrogen ions implanted with silicon |
title_full |
The study of microwave activation on hydrogen ions implanted with silicon |
title_fullStr |
The study of microwave activation on hydrogen ions implanted with silicon |
title_full_unstemmed |
The study of microwave activation on hydrogen ions implanted with silicon |
title_sort |
study of microwave activation on hydrogen ions implanted with silicon |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/02366057553934510527 |
work_keys_str_mv |
AT yukaihsu thestudyofmicrowaveactivationonhydrogenionsimplantedwithsilicon AT xúyùkǎi thestudyofmicrowaveactivationonhydrogenionsimplantedwithsilicon AT yukaihsu wēibōhuóhuàduìbèizhírùyúxìzhōngzhīqīnglízizhīyánjiū AT xúyùkǎi wēibōhuóhuàduìbèizhírùyúxìzhōngzhīqīnglízizhīyánjiū AT yukaihsu studyofmicrowaveactivationonhydrogenionsimplantedwithsilicon AT xúyùkǎi studyofmicrowaveactivationonhydrogenionsimplantedwithsilicon |
_version_ |
1717771626043408384 |