The Fabrication and Analysis of InGaN/GaN MQWs Laser Diode
碩士 === 國立中央大學 === 電機工程研究所 === 94 === Abstract This thesis presents the achievements reached in the development of InGaN/GaN multiple quantum well laser diodes on sapphire substrate. 1. Using an In0.3Ga0.7N capping layer and shallow mesa structure, which improves the p contact resistance to 9.58×10-5...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9z8s6d |