High speed GaN light emitting diode
碩士 === 國立中央大學 === 電機工程研究所 === 94 === We demonstrate a high-speed GaN based Light-Emitting-Diode (LED) at a wavelength of around 520nm for the application to plastic optical fiber (POF) communication. By use of the n-type doping in the GaN barrier layers of the InxGa1-xN/GaN based multiple-quantum-w...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/v93679 |