Ge floating dot memory
碩士 === 國立中央大學 === 電機工程研究所 === 94 === Abstract In this thesis, we utilize the method of thermal oxidation poly SiGe to form Ge nanocrystals and then fabricate the Ge nanocrystals transistor. In the process of fabrication, we have also developed the undestructive method to check surface state of the s...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/7z2a72 |