Ge floating dot memory

• Main Authors: Jung-Hsiuan Wu, 吳榮軒
• Other Authors: 李佩雯
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/7z2a72

碩士 === 國立中央大學 === 電機工程研究所 === 94 === Abstract In this thesis, we utilize the method of thermal oxidation poly SiGe to form Ge nanocrystals and then fabricate the Ge nanocrystals transistor. In the process of fabrication, we have also developed the undestructive method to check surface state of the sample by Ellipsometer. Besides, the gate etching in formation of Ge nanocrystals transistor is very important. Because removing Ge nanocrystals embedded in gate stacked greatly effects the following fabrication and characteristics of device. We have fabricated Ge nanocrystals MOS capacitors and FET by using the method of thermal oxidation poly SiGe to form Ge nanocrystals. After formation, we take some measurements included capacitance measurement, Retention time measurement, pulse width measurement and endurance measurement. According to the result of measurements we can easily realize the characteristics of our device and the problems of device structure.