A Self-Aligned Nanowire MOSFET
碩士 === 國立中央大學 === 電機工程研究所 === 94 === In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. The NiSi salicidation process is, then, incorporated into the fabrication of novel self-aligned nanowire MOSFET devices structure. A self-aligned nanowire MOSFET fabrica...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/h7jr5d |