| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 94 === In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. The NiSi salicidation process is, then, incorporated into the fabrication of novel self-aligned nanowire MOSFET devices structure. A self-aligned nanowire MOSFET fabricated on a 70-nm-thick SOI wafer, features advanced process modules including recessed nitride spacer, fully silicided (NiSi) source/drain, and self-aligned poly silicon gate. In the pursuit of low series resistance in a thin SOI, it is critical to optimize spacer width and utilize fully-silicide S/D. Since LOCOS process is integrated in a nanowire MOSFET process flow, one doesn’t require e-beam lithography to do precise alignment for ultra narrow gate stacked structure. A self-aligned poly gate technology is utilized to improve manufacturing yield efficiently. A recessed spacer structure is carried out using hot phosphoric acid etching, which is highly selective between Si3N4 and Si. Edge effects of Ni polycide formation are enhanced by such recessed spacer and result in Rs reduction further. Finally, the device performance is evaluated.
|
|---|
