Monolithically Integration of Edge Emission Evanescently Coupled Semiconductor Optical Amplifier and Photodetector at 1.55μm Wavelength
碩士 === 國立中央大學 === 電機工程研究所 === 94 === This thesis studied the monolithically integration of edge emission evanescently coupled semiconductor optical amplifier and photodetector at 1.55μm wavelength. Due to the smaller size and better integration with other optic electrical device of SOA, it can be in...
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| Format: | Others |
| Language: | zh-TW |
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2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5gvtmk |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 94 === This thesis studied the monolithically integration of edge emission evanescently coupled semiconductor optical amplifier and photodetector at 1.55μm wavelength. Due to the smaller size and better integration with other optic electrical device of SOA, it can be integrated in receiver module of optical fiber communication system. Input optical signal passed through the fiber guide and MQW, it can be amplified by stimulation emission of SOA. After signal amplified we design the coupling layer to couple the signal to the absorption layer of photo detector. We can provide the integrated device and the individual device in the same fabrication process.
We can take advantage of the integrated device to provide a simple gain measurement of SOA. It can reduce the optical loss and fiber alignment of conventional measurement or additional process of other ASE gain measurement. We can monitor the difference of photocurrent with different injection current of SOA. This thesis provided the low cost fabrication and measurement system.
We provide the maximum optical gain 8.8dB and the difference of TE mode and TM mode only 0.12dB. It can achieve the polarization insensitive. The performance of detector bandwidth all can achieve the 40GHz and conform to SONET/SDH OC-768.
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