Electron-beam Lithography Proximity Effect Correction and Fabrication of Anti-reflection Coating with BA-m Benzoxazine film

• Main Authors: Sheng-Jung Hung, 洪聖宗
• Other Authors: Cheng-Tung Chou
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/08075334784736849943

碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 94 === There are two major topics in my research. One is the research of electron-beam lithography proximity effect correction. The other one is anti-reflectance coating. Integrated circuit (IC) technology has been advanced significantly over the last 40 years. The steady progress is critically dependent on the development of optical lithography. However, optical lithography is now facing a number of challenges for generating extremely fine patterns. In addition to the optical solution, electron beam lithography is one of the promising alternatives for high-resolution patterning. In this thesis, we study and address the proximity effect that is an important issue in e-beam lithography. The first subject is e-beam lithography proximity effect correction and we introduce the experimental approach to discuss it. By fitting the experimental results base on the double Gaussian model, it gives the α, β and η scattering parameters. We build a transfer layer to transfer the patterns on the silicon wafer, and reduce the proximity effect parameters plus dose correction to give the accurate pattern design. The reflectance of the surface plays an important role to all semi-conduct devices that drive by incident light as well as solar cell. For this reason, we must use the anti-reflection layer to increase the penetration of the incident light at the cell surface. The secondary subject is coating polymer on the wafer and then deal with surface by plasma. We use AFM and SEM to see the top view for researching in the reduction of reflection.