| Summary: | 碩士 === 國立交通大學 === 奈米科技研究所 === 94 === Nanoparticles memories employing discrete charge traps as the charge storage media have attracted a lot of research attention as the promising candidates to replace conventional DRAM or Flash memories. DRAMs allow fast write/erase, but suffer from high power consumption due to their short retention time. It is also very difficult to fabricate high density DRAMs. Flash memories have the drawbacks of high operation voltage and slow write/erase because of their relatively thick tunnel oxide. Gold nanoparticles memories have been proposed as one of the approaches to further enhance the performance of such devices through work function engineering. In this study, we used a novel and simple approach to perform gold nanoparticles layers onto SiO2/Si sample by using metal-organic polymer spin deposition, to displace gold nanoparticles from RTA for evenly nanoparticles. Metal-organic polymer is designed for application with a spinner. After 45 seconds of spinning, a fairly hard film will form on the wafer which contains gold atoms attached through suitable groupings to the carbon-carbon backbone forming the polymer. The wafer is then heated to 250 ℃ to 300 ℃. In 25 to 55 minutes gold decomposition will occur, and CO2 and H2O which pass out the diffusion tube. We have been adopted to provide metal-organic polymer spin deposition onto SiO2 (10 nm)/Si to generate nanopatterns and followed by 250�aC bake process for 25 to 55 minutes. Next, the silicon dioxide layer with 10 nm in thickness by using the PECVD process was deposited on the samples. After Au/Ti metallic layer was deposited on double sides, contact pads were defined with conventional lithography and lift-off process for electrical characteristic measurement. In this study, we have successfully utilized the decomposition metal-organic polymer such that gold nanoparticles formed onto silicon oxide surface and memory effect observed.
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