Simulation and Analysis of MOSFETs in SOI Substrates
碩士 === 國立交通大學 === 理學院碩士在職專班應用科技學程 === 94 === In this study, we designed, simulated and analyzed the device characterization of silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The effects of doping concenteation gradient,spacer length, gate length, and silicon...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/77291506435729121759 |