Design、Fabrication and Characterization of Monolithic CMOS Compatible Photodetectors

• Main Authors: Chuan-Chang Liu, 劉川漳
• Other Authors: Yang-Tung Huang
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/65553161667493517415

碩士 === 國立交通大學 === 電子工程系所 === 94 === In this study, monolithic CMOS technology compatible photodetectors have been investigated. Using the metal as the light-blocking layer, the input light can form a spatial periodical variation to the detector. Thus, the diffusion photocurrent within the substrate can be cancelled out, and the detector response speed can be improved. A rigorous model for analyzing the detectors is adopted. All device parameters in our design have been discussed systematically for obtaining high speed operation without significantly reducing the detector responsivity. The devices were fabricated by TSMC (Taiwan Semiconductor Manufacturing Company) 0.18 um 2P6M CMOS technology. By taking VCSEL (Vertical-Cavity Surface-Emitting Laser) with input light wavelength of 850 nm as input signal, the experimental results of eye patterns of the signals show that these devices can operate at a 1.5-Gb/s datarate.