The Band Structure of Metal-Oxide-Semiconductor Measured by Kelvin Probe Force Microscopy
碩士 === 國立交通大學 === 物理研究所 === 94 === Many researches have being conducted using Kelvin probe force microscopy (KFM) on semiconductor devices, because of its less destructive nature, high resolution quality, and easy-to-control advantages. By measuring the contact potential difference between the surfa...
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| Format: | Others |
| Language: | zh-TW |
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2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12677047156862848335 |