Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃

碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === The objective of this work is to joint ZrO2 to itself using Ti foil. The reaction was at the temperature from 1100℃ to 1500℃ in the atmosphere of argon. The microstructure of the reaction interface were characterized by scanning electron microscopy(SEM)、electro...

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Main Authors: Tsai,Yi-Ting, 蔡宜庭
Other Authors: Chien-Cheng Lin
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/08868319970984455639
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spelling ndltd-TW-094NCTU51590582016-05-27T04:18:54Z http://ndltd.ncl.edu.tw/handle/08868319970984455639 Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ 利用鈦金屬將氧化鋯接合之微觀結構分析 Tsai,Yi-Ting 蔡宜庭 碩士 國立交通大學 材料科學與工程系所 94 The objective of this work is to joint ZrO2 to itself using Ti foil. The reaction was at the temperature from 1100℃ to 1500℃ in the atmosphere of argon. The microstructure of the reaction interface were characterized by scanning electron microscopy(SEM)、electron probe microanalyzer (EPMA) and analytical transmission electron microscopy(TEM/EDS). After annealing at 1100℃/36h, the dissolution of a large amount of oxygen into titanium gave rise to α-Ti(O) solid solution. At temperature above 1200℃,the oxygen transport through the interface resulting in the growth of titanium oxide, TiO and Ti2O3.In the zirconia side, t-ZrO2 was found after 1100℃/36h-1400℃/36h annealing, and c-ZrO2 was also found after annealing at 1300℃/36h. Chien-Cheng Lin 林健正 2006 學位論文 ; thesis 88 zh-TW
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description 碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === The objective of this work is to joint ZrO2 to itself using Ti foil. The reaction was at the temperature from 1100℃ to 1500℃ in the atmosphere of argon. The microstructure of the reaction interface were characterized by scanning electron microscopy(SEM)、electron probe microanalyzer (EPMA) and analytical transmission electron microscopy(TEM/EDS). After annealing at 1100℃/36h, the dissolution of a large amount of oxygen into titanium gave rise to α-Ti(O) solid solution. At temperature above 1200℃,the oxygen transport through the interface resulting in the growth of titanium oxide, TiO and Ti2O3.In the zirconia side, t-ZrO2 was found after 1100℃/36h-1400℃/36h annealing, and c-ZrO2 was also found after annealing at 1300℃/36h.
author2 Chien-Cheng Lin
author_facet Chien-Cheng Lin
Tsai,Yi-Ting
蔡宜庭
author Tsai,Yi-Ting
蔡宜庭
spellingShingle Tsai,Yi-Ting
蔡宜庭
Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃
author_sort Tsai,Yi-Ting
title Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃
title_short Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃
title_full Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃
title_fullStr Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃
title_full_unstemmed Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃
title_sort microstructural characterization of the zro2/ti interface between 1100℃ and 1500℃
publishDate 2006
url http://ndltd.ncl.edu.tw/handle/08868319970984455639
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