Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃
碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === The objective of this work is to joint ZrO2 to itself using Ti foil. The reaction was at the temperature from 1100℃ to 1500℃ in the atmosphere of argon. The microstructure of the reaction interface were characterized by scanning electron microscopy(SEM)、electro...
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ndltd-TW-094NCTU51590582016-05-27T04:18:54Z http://ndltd.ncl.edu.tw/handle/08868319970984455639 Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ 利用鈦金屬將氧化鋯接合之微觀結構分析 Tsai,Yi-Ting 蔡宜庭 碩士 國立交通大學 材料科學與工程系所 94 The objective of this work is to joint ZrO2 to itself using Ti foil. The reaction was at the temperature from 1100℃ to 1500℃ in the atmosphere of argon. The microstructure of the reaction interface were characterized by scanning electron microscopy(SEM)、electron probe microanalyzer (EPMA) and analytical transmission electron microscopy(TEM/EDS). After annealing at 1100℃/36h, the dissolution of a large amount of oxygen into titanium gave rise to α-Ti(O) solid solution. At temperature above 1200℃,the oxygen transport through the interface resulting in the growth of titanium oxide, TiO and Ti2O3.In the zirconia side, t-ZrO2 was found after 1100℃/36h-1400℃/36h annealing, and c-ZrO2 was also found after annealing at 1300℃/36h. Chien-Cheng Lin 林健正 2006 學位論文 ; thesis 88 zh-TW |
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碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === The objective of this work is to joint ZrO2 to itself using Ti foil. The reaction was at the temperature from 1100℃ to 1500℃ in the atmosphere of argon. The microstructure of the reaction interface were characterized by scanning electron microscopy(SEM)、electron probe microanalyzer (EPMA) and analytical transmission electron microscopy(TEM/EDS). After annealing at 1100℃/36h, the dissolution of a large amount of oxygen into titanium gave rise to α-Ti(O) solid solution. At temperature above 1200℃,the oxygen transport through the interface resulting in the growth of titanium oxide, TiO and Ti2O3.In the zirconia side, t-ZrO2 was found after 1100℃/36h-1400℃/36h annealing, and c-ZrO2 was also found after annealing at 1300℃/36h.
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Chien-Cheng Lin |
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Chien-Cheng Lin Tsai,Yi-Ting 蔡宜庭 |
author |
Tsai,Yi-Ting 蔡宜庭 |
spellingShingle |
Tsai,Yi-Ting 蔡宜庭 Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ |
author_sort |
Tsai,Yi-Ting |
title |
Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ |
title_short |
Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ |
title_full |
Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ |
title_fullStr |
Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ |
title_full_unstemmed |
Microstructural Characterization of the ZrO2/Ti interface between 1100℃ and 1500℃ |
title_sort |
microstructural characterization of the zro2/ti interface between 1100℃ and 1500℃ |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/08868319970984455639 |
work_keys_str_mv |
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