Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape
碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === In this study, two commercial glass, ZnO–B2O3–SiO2 (NEG Ltd., GP5210) and B2O3–SiO2 (NEG Ltd., GA50), were used to improve the sintering and dielectric property of Mg4Nb2O9 ceramic. The interaction between GP5210 and Mg4Nb2O9 resulted in the crystallization pha...
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ndltd-TW-094NCTU51590362016-05-27T04:18:36Z http://ndltd.ncl.edu.tw/handle/67260512866183725268 Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape Mg4Nb2O9相陶瓷填入對低溫共燒陶瓷基板之影響研究 Yu-Ting Wang 王俞婷 碩士 國立交通大學 材料科學與工程系所 94 In this study, two commercial glass, ZnO–B2O3–SiO2 (NEG Ltd., GP5210) and B2O3–SiO2 (NEG Ltd., GA50), were used to improve the sintering and dielectric property of Mg4Nb2O9 ceramic. The interaction between GP5210 and Mg4Nb2O9 resulted in the crystallization phase and superlattice structure. Further investigations indicated that the superlattice structure had greatly contributed to the microwave dielectric property. The optimized microwave dielectric properties of Mg4Nb2O9 /80wt % GP5210 were εr = 6.63, Q = 2855.9(9 GHz), τf = -16.72 ppm/℃.Compared to GP5210 / Mg4Nb2O9, there was no interaction between GA50 and Mg4Nb2O9. The optimized microwave dielectric properties of Mg4Nb2O9 / 80wt%GA50 were εr = 4.45,Q = 1788.4(9 GHz) ,τf = -16.89 ppm/℃. The optimized microwave dielectric properties of the LTCC Tape for B2O3–SiO2 glass system were εr = 4.253,Q = 12388.3 (15 GHz), and for ZnO–B2O3–SiO2 glass system were εr = 6.627, Q=19531.5 at 15GHz by Open Reasonator. The low-temperature sintering tape had appreciate dielectric properties, therefore, were suitable for LTCC application. Pang Lin 林鵬 2006 學位論文 ; thesis 128 zh-TW |
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碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === In this study, two commercial glass, ZnO–B2O3–SiO2 (NEG Ltd., GP5210) and B2O3–SiO2 (NEG Ltd., GA50), were used to improve the sintering and dielectric property of Mg4Nb2O9 ceramic. The interaction between GP5210 and Mg4Nb2O9 resulted in the crystallization phase and superlattice structure. Further investigations indicated that the superlattice structure had greatly contributed to the microwave dielectric property. The optimized microwave dielectric properties of Mg4Nb2O9 /80wt % GP5210 were εr = 6.63, Q = 2855.9(9 GHz), τf = -16.72 ppm/℃.Compared to GP5210 / Mg4Nb2O9, there was no interaction between GA50 and Mg4Nb2O9. The optimized microwave dielectric properties of Mg4Nb2O9 / 80wt%GA50 were εr = 4.45,Q = 1788.4(9 GHz) ,τf = -16.89 ppm/℃.
The optimized microwave dielectric properties of the LTCC Tape for B2O3–SiO2 glass system were εr = 4.253,Q = 12388.3 (15 GHz), and for ZnO–B2O3–SiO2 glass system were εr = 6.627, Q=19531.5 at 15GHz by Open Reasonator. The low-temperature sintering tape had appreciate dielectric properties, therefore, were suitable for LTCC application.
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Pang Lin |
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Pang Lin Yu-Ting Wang 王俞婷 |
author |
Yu-Ting Wang 王俞婷 |
spellingShingle |
Yu-Ting Wang 王俞婷 Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape |
author_sort |
Yu-Ting Wang |
title |
Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape |
title_short |
Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape |
title_full |
Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape |
title_fullStr |
Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape |
title_full_unstemmed |
Effects of Mg4Nb2O9 Ceramic Dielectric Modify Agent in Low Temperature Co-fired Ceramic Tape |
title_sort |
effects of mg4nb2o9 ceramic dielectric modify agent in low temperature co-fired ceramic tape |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/67260512866183725268 |
work_keys_str_mv |
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