Front-side Copper Metallization Process for InAlAs/InGaAs Low Noise MHEMTs
碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === In this dissertation, the feasibility of using Cu-metallized Schottky contact and interconnects for an InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) is studied. The front side Cu metallization process was performed to reduce the producti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42299396803959434122 |