Research on Nitride-Based Quantum Confined Light Emitting Device Grown By Metalorganic Chemical Vapor Deposition System
博士 === 國立交通大學 === 光電工程系所 === 94 === GaN materials are very interested for their direct wide bandgap structures and many advantages of material properties. Therefore they are likely to be the basis of a strong development of novel family semiconductor devices, for optronics as well as for electronics...
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| Format: | Others |
| Language: | en_US |
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2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17646618472306612542 |