| Summary: | 碩士 === 國立暨南國際大學 === 通訊工程研究所 === 94 === In this thesis, we study the character of passive devices including transmission line inductors, miniature spiral inductors and single-turn multi-layer interlaced stacked transformers for 30 to 100 GHz band RFIC applications. In addition, these critical RF devices integrate circuit for millimeter-wave band applications, and two circuits including RF Front-end amplifier it’s a broadband distributed amplifier for millimeter-wave band and millimeter-wave filter it’s a miniature millimeter-wave filter for 60 GHz wireless local area network.
The RF passive devices (1/3) study and analyze the character of inductively-coupled-plasma (ICP) deep trench technology to remove the silicon selectively which is under the TL inductors in order to improve performance.
The RF passive devices (2/3) study and analyze the character of miniature spiral inductors. In addition, we study the character of micromachine miniature spiral inductors and tuning model.
The RF passive devices (3/3) study and analyze the character of single-turn multi-layer interlaced (SMIS) stacked transformers. This structure whose Kim ~1 is proposed in RF band. We change layers and inter diameter to reach higher frequency band.
The RF amplifier (1/2) is the design of a millimeter-wave filter. We use miniature millimeter-wave inductors, ultra-low-loss transmission line inductors and small capacitance value to combine miniature millimeter-wave filter for 60 GHz WLAN applications.
The RF amplifier (2/2) is the design of distributed amplifiers. We use spiral inductors of small inductance value and good impedance matching to improve circuit performance. The peak gain is 13dB, and bandwidth is 2.9-15.5GHz.
Keywords: transmission line (TL) inductors, miniature spiral inductors, single-turn multi-layer interlaced stacked (SMIS) transformers, RF Front-end amplifier, wireless local area network (WLAN), inductively-coupled-plasma (ICP), Kim, miniature millimeter-wave filter, ultra-low-loss.
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