| Summary: | 碩士 === 國立成功大學 === 微機電系統工程研究所 === 94 === The size of electronic devices are demanded to be small, and the processing technique of nanowires and nanoparticles become more important. how to produce hetero-junctions between silicon wafer and nanomaterials, of which SiC has been adopted widely as high-energy electronic devices or high-temperature devices for its large good stability in high temperature. There are two common forms of SiC: hexagonal α-SiC, and cubic-centered β-SiC which can be utilized to specialized electro-optical devices for its indirect bandgap with bandgap energy of 2.2eV to generate green light.
In this thesis, chemical vapor deposition is adopted for the epitaxy growth of SiC nanowire, with ferrocene as the catalyst and silicon wafer as the substrate (scratched, etched, or as received). The reactive temperature is 900°C- 1100°C and the flow rate is 50sccm After analysis, the products after reaction are found to be carbon nanotube(CNT) and solid SiC nanowire with nanoscale coaxial cable. TEM and Raman scattering revealed the core consists of body-centered cubic β-SiC and the shell is formed with amorphous material.
SiC nanowire is synthesized with ferrocene and silicon wafer. Microscopically, the scratching process leads to the nano-sized irregular surface of the substrate, therefore the size effect becomes significant, and the probability for the reaction of silicon and carbon at low temperature is increased. Macroscopically, the relationship between the overall production and roughness can be verified.
|
|---|
