| Summary: | 碩士 === 國立成功大學 === 微機電系統工程研究所 === 94 === In this reserch, we use the novel red phosphorescence dopant, (4’-mpiq)2Ir(acac) (R-05）and (7-mpiq)2Ir(acac) (R-21),to dope into emission layer by co-evaporation. First, we design the different structure by selecting different host materials to obtain the better luminescence efficiency and red emission .Secend, adjust the concentration of the emission layer in the perferred structure, and then investigate the characteristics of the devices .
The research shows clearly the control of the R-05 dopant concentration is very important and sensitivity to characteristics of the device. We obtain the nearly pure white emission with CIE coordinates (0.38，0.37)and pure red emission with CIE coordinates (0.66,0.32) in the dopant system. We observe the difference between R-05 and R-21 in addition.
The research attains the characteristic data , the maxima luminescence (12540cd/ m2) and maxima device efficiency (15.3cd/A) in R-05, the maxima luminescence (9108cd/m2) and maxima device efficiency (10.8cd/A) in R-21 and the maxima luminescence (331cd/m2) and maxima device efficiency (2.5cd/A) in white emission device.
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