The Fabrication and Characterization of Terbium Nitride Metal Gate with Hafnium Oxide High-k Material MOS Field-effect Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === The continuous CMOS scaling has resulted in a continuous improving of the speed, power consumption, packing density and performance of integrated circuits. However, shrinkage in gate oxide thickness in tackling short channel effects has now been limited by g...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14410401633402005239 |