The Study of Brightness, Reliability and ESD ability on Nitride-based LEDs
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === In this dissertation, the nitride based epitaxy material was grown by metalorganic chemical vapor deposition (MOCVD). Improvements of brightness, reliability and electrostatic discharge (ESD) ability on InGaN/GaN LED devices have been investigated. In order...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92186611628494358247 |