| Summary: | 碩士 === 國立成功大學 === 航空太空工程學系碩博士班 === 94 === In this thesis the Rapid Thermal Chemical Vapor Deposition of silicon in a RTP furnance with six heating rings is studied numerically. The 300 mm silicon wafer is heated rapidly to the designated process temperature and then maintains at that temperature until the desired deposition thickness is achieved. When adaptive heating powers are employed, the maximum temperature difference of the wafer can be reduced to within 3K. The effects of the following parameters such as: the process temperature, process pressure, rotational speed of the wafer, wafer surface properties, and convection of the reactngn gas flow,
on the deposition thickness are investigated.
It is found that the deposition thickness is strongly influenced by the wafer temperature distribution and
the thickness uniformity is strongly related to the wafer temperature uniformity. Since the decompostion rate of silane increases exponentially when temperature is higher than 1200K which makes the deposition thickness extremely sensitive to the wafer temperature and leads to poor uniformity. In addition, the lower chamber pressure and the rotating wafer results in better temperature uniformity and thus deposition thickness uniformity. The Coating with a thin film of silicon dioxide on the silicon wafer can reduc the power of heating lamp which is needed to deposit more
silicon.
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