Electrical characterization of the well-aligned ZnO nanorods by impedance spectroscopy
碩士 === 國立成功大學 === 化學工程學系碩博士班 === 94 === AC impedance analysis has been employed to investigate the carrier concertations of the well-aligned ZnO nanorods on p++-Si. Indium contacts were deposited on the ZnO nanorod surfaces and p++-Si backside to form the ohmic contacts. Elements, such as junction...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60793810818834796337 |
| Summary: | 碩士 === 國立成功大學 === 化學工程學系碩博士班 === 94 === AC impedance analysis has been employed to investigate the carrier concertations of the well-aligned ZnO nanorods on p++-Si. Indium contacts were deposited on the ZnO nanorod surfaces and p++-Si backside to form the ohmic contacts. Elements, such as junction capacitances of p++-Si/n-ZnO nanorod can be extracted from an equivalent circuit of the reverse-biased device obtained by curve fitting. The carrier concentration of the n-ZnO nanorods is obtained from the linear relationship of the inverse capacitance squared and the reverse-biased voltage. The ZnO nanorods grown at varoius Zn/O molar ratios (MR) in the study possess the carrier concentration in the range of 3x1016cm-3~9x1017cm-3 and increases with the MR.
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