Design of DC-DC voltage boosted regulator

碩士 === 國立中興大學 === 電機工程學系所 === 94 === This content of this thesis is to present a charge pump circuit which applied to non-volatile memories with a new proposed regulator. The complete circuit includes a voltage-controlled oscillator, a four-phase generator, a high-amplitude generator, a charge pump...

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Main Authors: Shu-Ting Chung, 鐘淑婷
Other Authors: Hong-Chin Lin
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/99715493263364512385
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spelling ndltd-TW-094NCHU54410652016-05-25T04:14:51Z http://ndltd.ncl.edu.tw/handle/99715493263364512385 Design of DC-DC voltage boosted regulator 高電壓直流調節器之電路設計 Shu-Ting Chung 鐘淑婷 碩士 國立中興大學 電機工程學系所 94 This content of this thesis is to present a charge pump circuit which applied to non-volatile memories with a new proposed regulator. The complete circuit includes a voltage-controlled oscillator, a four-phase generator, a high-amplitude generator, a charge pumping circuit and the new proposed voltage regulator circuit. According to prior literatures, we know that it is required a voltage regulator to control the voltage produced by charge pumping circuit for applications in non-volatile memory. In this thesis, unlike the most popular regulator using comparator to switch the oscillator on or off to regulate the charge pumping circuit, the proposed regulator circuit dynamically adjusts the frequency of oscillator circuit so that the charge pumping circuit can generate the desired constant voltage. This new simple circuit reduces ripples at the output. The DC-DC voltage boosted regulator circuit can generate the output voltages of 7V~9V according to the different reference voltages with the oscillation frequency up to 16MHz, while the output ripple of this circuit is less than 260mV. Hong-Chin Lin 林泓均 2006 學位論文 ; thesis 54 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中興大學 === 電機工程學系所 === 94 === This content of this thesis is to present a charge pump circuit which applied to non-volatile memories with a new proposed regulator. The complete circuit includes a voltage-controlled oscillator, a four-phase generator, a high-amplitude generator, a charge pumping circuit and the new proposed voltage regulator circuit. According to prior literatures, we know that it is required a voltage regulator to control the voltage produced by charge pumping circuit for applications in non-volatile memory. In this thesis, unlike the most popular regulator using comparator to switch the oscillator on or off to regulate the charge pumping circuit, the proposed regulator circuit dynamically adjusts the frequency of oscillator circuit so that the charge pumping circuit can generate the desired constant voltage. This new simple circuit reduces ripples at the output. The DC-DC voltage boosted regulator circuit can generate the output voltages of 7V~9V according to the different reference voltages with the oscillation frequency up to 16MHz, while the output ripple of this circuit is less than 260mV.
author2 Hong-Chin Lin
author_facet Hong-Chin Lin
Shu-Ting Chung
鐘淑婷
author Shu-Ting Chung
鐘淑婷
spellingShingle Shu-Ting Chung
鐘淑婷
Design of DC-DC voltage boosted regulator
author_sort Shu-Ting Chung
title Design of DC-DC voltage boosted regulator
title_short Design of DC-DC voltage boosted regulator
title_full Design of DC-DC voltage boosted regulator
title_fullStr Design of DC-DC voltage boosted regulator
title_full_unstemmed Design of DC-DC voltage boosted regulator
title_sort design of dc-dc voltage boosted regulator
publishDate 2006
url http://ndltd.ncl.edu.tw/handle/99715493263364512385
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