| Summary: | 碩士 === 崑山科技大學 === 電子工程研究所 === 94 === The general conventionally negative differential resistance (NDR) device is resonant-tunneling-diode (RTD) device. The RTD device is fabricated by the technique of compound semiconductor. This kind of NDR device is possessed of the high electron mobility. But it can’t be provided the convenience in consisted of other devices and circuits based on the CMOS or BiCMOS technology.
However in our works, we proposed a new NDR device which is composed of metal-oxide-semiconductor field-effect-transistor (MOS) devices and bipolar junction transistor devices. Because this NDR device is consisted of two NMOS 、one PMOS, and one BJT, we call this novel NDR device as MOS-BJT-NDR device. The MOS-BJT-NDR device is fabricated by SiGe 0.35μm 3P3M BiCMOS process.
The MOS-BJT-NDR device could exhibit the NDR current-voltage (I-V) characteristic with different peak and valley current just by suitably arranging the width and length parameters of the MOS devices. Therefore, this kind of device has a wide range of modulation in the I-V characteristics. Especially, it will have a benefit of the applied circuit design.
A monostable-bistable transition logic element (MOBILE), employing two NDR devices connected in series, is a 3-bit logic gate. In this device, two NDR devices are connected in series, one of the NDR devices and a NMOS are connected in parallel. Therefore, the peak current of this NDR device can be controlled by means of an applied gate voltage of the NMOS device. For a two-input MOBILE gate, this implies the possibility of a variable function logic gate.
Another R-BJT-NDR applied circuit is the frequency divider. This frequency divider consists of three components, including R-BJT-NDR, inductor and capacitance. We can get a different dividing ratio by changing frequency, voltage of input signal, etc.
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