Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM

碩士 === 義守大學 === 電子工程學系碩士班 === 94 === Large bit line wire loading is one of the main bottlenecks to the performance of SRAM. We propose a charge-transfer mechanism and a new pre-charge scheme to improve the sensing speed of the traditional current latch sense amplifier. The improvement of sensing spe...

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Main Authors: Yu-shu Tsai, 蔡毓恕
Other Authors: Ying-Wei Jan
Format: Others
Language:en_US
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/74187884365545419376
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spelling ndltd-TW-094ISU054280202015-10-13T14:49:54Z http://ndltd.ncl.edu.tw/handle/74187884365545419376 Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM 靜態隨機存取記憶體之電荷傳輸電流栓鎖感應放大器線路的分析與設計 Yu-shu Tsai 蔡毓恕 碩士 義守大學 電子工程學系碩士班 94 Large bit line wire loading is one of the main bottlenecks to the performance of SRAM. We propose a charge-transfer mechanism and a new pre-charge scheme to improve the sensing speed of the traditional current latch sense amplifier. The improvement of sensing speed of the proposed design is about 4% comparing to the traditional current latch sense amplifier. In addition, the proposed design has much better tolerance and faster sensing speed on Vt mismatch of NMOS transistors. The presented circuit simulation result is evaluated in the TSMC 0.18μm Mixed Signal/RF Process Model. Ying-Wei Jan 簡映偉 2006 學位論文 ; thesis 49 en_US
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language en_US
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sources NDLTD
description 碩士 === 義守大學 === 電子工程學系碩士班 === 94 === Large bit line wire loading is one of the main bottlenecks to the performance of SRAM. We propose a charge-transfer mechanism and a new pre-charge scheme to improve the sensing speed of the traditional current latch sense amplifier. The improvement of sensing speed of the proposed design is about 4% comparing to the traditional current latch sense amplifier. In addition, the proposed design has much better tolerance and faster sensing speed on Vt mismatch of NMOS transistors. The presented circuit simulation result is evaluated in the TSMC 0.18μm Mixed Signal/RF Process Model.
author2 Ying-Wei Jan
author_facet Ying-Wei Jan
Yu-shu Tsai
蔡毓恕
author Yu-shu Tsai
蔡毓恕
spellingShingle Yu-shu Tsai
蔡毓恕
Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM
author_sort Yu-shu Tsai
title Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM
title_short Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM
title_full Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM
title_fullStr Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM
title_full_unstemmed Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM
title_sort design and analysis of a charge transfer current latched sense amplifier circuit for sram
publishDate 2006
url http://ndltd.ncl.edu.tw/handle/74187884365545419376
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