Studies of 630-nm n-Type Modulation-Doped AlGaInP Multiquantum-Well Light-Emitting Diodes
碩士 === 義守大學 === 電子工程學系碩士班 === 94 === AlGaInP multiple-quantum-well (MQW) light-emitting diodes (LEDs) with n-type modulation-doped (MD) barrier layers were grown by metal-organic vapor phase epitaxy (MOVPE) and their characteristics were evaluated by current-voltage (I-V), electroluminesece (EL), ou...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44608508794890461221 |