| Summary: | 碩士 === 義守大學 === 材料科學與工程學系碩士班 === 94 === Transparent conductive ZnO film co-doped with Ru and Al by using RF magnetron sputtering at room temperature were investigated. To further increase electrical conductivity of the ZnO thin films, most of the efforts have been done on single element doping by substituting Zn with Al, B and Ga atoms. This allows the increase of carrier concentration, therefore improves the electrical conductivity of the films. The aim of this work is to apply the co-doping method to Al and Ru doped ZnO films and examines the effedts of varying ruthenium concentration on the structure, electrical and optical properties of AZO thin films.
The Al2O3 doping concentration was fixed at 0.5 wt%, while RuO2 was varied from 0to 3 wt%. The other process parameters such as sputtering time, sputtering power and working pressure were also carried out to optimize the electrical and optical properties. In addition, PET substrate was selected for studying possible flexible display application.
The optimized film properties were obtain with 3 mtorr sputtering pressure,50 W sputtering power and 45 minutes sputtering time. The corresponding electrical resistivities were 1.38×10-3 Ω.cm and 9.0×10-4 Ω.cm with carrier concentration of 9.34×1020 cm-3 and 9.49×1020 cm-3, the mobilities of 4.07 cm2/Vs and 6.21 cm2/Vs. for glass and PET substrate, respectively. The optical transmittances for all the films in the range of 300 to 900 nm wavelength were greatwe than 80 %.
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