| Summary: | 碩士 === 華梵大學 === 機電工程研究所 === 94 === This thesis presents a novel and high-precision technology for extracting the Young’s modulus and Residual stress of thin films through measuring the capacitance-voltage variation of micro test-key at wafer level. Since the driving and response signals are all electrical, they could be accomplished using existing semiconductor testing equipments through probing on the bonding pads of devices. Because the hardware replacement could be avoided, this methodology shows substantial advantage over other property-extraction methods for large-scale implementation in semiconductor or MEMS fabs. Two algorithms are derived, One is extracting the Young’s modulus through the capacitance-voltage measurement of micro cantilever beam, and the other is extracting the Young’s modulus and Residual stress through the capacitance-voltage measurement of micro bridge. Since the Young’s modulus of single crystalline silicon and aluminum are well-defined, so a micro cantilever beam made of single crystalline silicon and a micro bridge made of sputtering aluminum were used to verify the present methodology. The extracted Young’s modulus of silicon in (110) crystalline plane by the present methodology is about 165 GPa. Compared to the well-defined value (168 GPa), the error percentage is about 1%. The extracted Young’s modulus of sputtering aluminum by the present methodology is comparable to the value (74.14GPa) published in the literature. The error percentage is about 2%. The extracted residual stress of sputtering aluminum by the present methodology comparing to the data measured by the surface profiler has the error percentage of about 1%. The precision and accuracy of the present methodology are thus verified.
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