Scanning Capacitance Microscopic Investigation of Boron Activation Induced by Post-spike Low-temperature Annealing

碩士 === 逢甲大學 === 電子工程所 === 94 === In this study, we employed a scanning capacitance microscopy (SCM) to investigate boron activation in surface region shallower than 150nm in depth. In order to suppress photoperturbation effects, we employed front-wing conductive probes to obtain SCM images of studie...

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Bibliographic Details
Main Authors: Hao-ta Cheng, 鄭皓達
Other Authors: none
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/05607443908816891138