Scanning Capacitance Microscopic Investigation of Boron Activation Induced by Post-spike Low-temperature Annealing
碩士 === 逢甲大學 === 電子工程所 === 94 === In this study, we employed a scanning capacitance microscopy (SCM) to investigate boron activation in surface region shallower than 150nm in depth. In order to suppress photoperturbation effects, we employed front-wing conductive probes to obtain SCM images of studie...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2006
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Online Access: | http://ndltd.ncl.edu.tw/handle/05607443908816891138 |