| Summary: | 碩士 === 逢甲大學 === 電子工程所 === 94 === In this study, we employed a scanning capacitance microscopy (SCM) to investigate boron activation in surface region shallower than 150nm in depth. In order to suppress photoperturbation effects, we employed front-wing conductive probes to obtain SCM images of studied samples, and also investigated boron activation induced by post-spike annealing at low temperatures. Environmental conditions, including humidity and photoperturbation level, were well controlled. Experimental results indicated that post-spike low-temperature annealing can enhance boron activation in a shallower implanted region and induce junction narrowing in vertical and lateral dimensions, even if the annealing temperature drops to 500 °C. The point defect generation/recombination associated with boron activation and deactivation occurred during the following low temperature processes. Our experimental results also show that the lateral electrical junction is more unstable than the vertical junction.
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