Design and Study of A New Cell for Power Vertical Double-Diffuse Metal Oxide Semiconductor Field Effect Transistor

碩士 === 逢甲大學 === 電子工程所 === 94 === Power devices were proposed in 1950’. With the increasing of consumed electronic products, the development and applications also increase, especially Power MOSFETs. However, how to design an excellent device and an efficient and accurate measurement is a research poi...

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Bibliographic Details
Main Authors: Chien-nan Liao, 廖健男
Other Authors: Feng-tso Chien
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/74154338604487932573
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Summary:碩士 === 逢甲大學 === 電子工程所 === 94 === Power devices were proposed in 1950’. With the increasing of consumed electronic products, the development and applications also increase, especially Power MOSFETs. However, how to design an excellent device and an efficient and accurate measurement is a research point. Power MOSFETs always used as a switching for circuit applications. It requires high switching speed and low power loss. Present, the most often mask designs are linear cell and square cell. They have their own drawbacks. Although switching speed of linear cell is faster, the larger on resistance results in larger power loss for applications. On resistance of square cell is smaller, the lower switching speed leads to a limitation for high frequency applications. In addition, there is a patent problem for square cell. In this study, we proposed a new cell design, wing cell, which combines linear cell and square cell. We study and analyze the process and characteristics by ISE-TCAD. With linear cell design, on resistance and gate charge of the device can be reduced 2.4%~2.6% and 20.4% compares with square cell.